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As a basic electronic component, all engineers know that they have unidirectional conductivity. According to the classification of semiconductor materials, it can be divided into silicon diodes and germanium diodes; according to the classification of applications, it can be divided into rectifier diodes, detection diodes, switching diodes and Zener diodes. Regardless of how it is divided, it is important to consider that the diode has a parameter that directly affects whether the transistor will be damaged by overload.
Dissipated power
The dissipated power is also called the maximum allowable dissipated power PCM of the collector, and refers to the maximum collector dissipated power when the transistor parameter changes do not exceed the specified allowable value. It is the difference between the total power of the active components of the grid component or the entire network at a certain time and the total output power of the active power. Under linear conditions, the conduction power dissipation calculation is relatively simple, PD=I2R, or PD=U2/R; while in the switching state, the calculation is relatively complicated.
The dissipated power of the diode is related to the allowable junction temperature. The maximum junction temperature allowed by the silicon diode is 150 °C, while the maximum allowable junction temperature is 85 °C. The operating temperature of the semiconductor is limited. When the actual power is increased, the node temperature will also become larger. When the node temperature reaches 150 °C, the power at this time is the maximum dissipated power. Of course, the power dissipated has a certain relationship with the package size. Generally, the device with a large dot size has a relatively large maximum power dissipation. The most common one is that the high-power device has a large-volume, large-area heat-dissipating metal surface.